Method for forming semiconductor device structure with fine line pitch and fine end-to-end space

ABSTRACT

A method for forming a semiconductor device structure is provided. The method includes providing a substrate and forming a bottom layer, a middle layer, and a top layer on the substrate. The method also includes patterning the top layer to form a patterned top layer and patterning the middle layer by a patterning process including a plasma process to form a patterned middle layer. The plasma process is performed by using a mixed gas including hydrogen gas (H 2 ). The method further includes controlling a flow rate of the hydrogen gas (H 2 ) to improve an etching selectivity of the middle layer to the top layer, and the patterned middle layer includes a first portion and a second portion parallel to the first portion, and a pitch is between the first portion and the second portion.

CROSS REFERENCE TO RELATED APPLICATIONS

This Application claims the benefit of U.S. Provisional Application No.62/132,128, filed on Mar. 12, 2015, and entitled “Method for formingSemiconductor device structure with fine line pitch and fine end-to-endspace”, the entirety of which is incorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment. Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers of material over a semiconductorsubstrate, and patterning the various material layers using lithographyto form circuit components and elements thereon. Many integratedcircuits are typically manufactured on a single semiconductor wafer, andindividual dies on the wafer are singulated by sawing between theintegrated circuits along a scribe line. The individual dies aretypically packaged separately, in multi-chip modules, or in other typesof packaging, for example.

The size of semiconductor devices has been continuously reduced in thefabrication process in order to increase device density. Accordingly, amulti-layered interconnect structure is provided. The interconnectstructure may include one or more conductive lines and via layers.

Although existing interconnect structures and methods of fabricatinginterconnect structures have been generally adequate for their intendedpurpose, they have not been entirely satisfactory in all aspects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1L show cross-sectional representations of various stages offorming a semiconductor device structure with an interconnect structure,in accordance with some embodiments of the disclosure.

FIG. 1B′ shows an enlarged view of the region A of FIG. 1B, inaccordance with some embodiments of the disclosure.

FIG. 1D′ shows an enlarged view of the region B of FIG. 1D, inaccordance with some embodiments of the disclosure.

FIG. 1L′ shows a perspective view of a semiconductor device structure,in accordance with some embodiments of the disclosure.

FIG. 2 shows a plot of the first pitch versus the flow rate of hydrogengas, in accordance with some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matterprovided. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements. It is understood that additional operations canbe provided before, during, and after the method, and some of theoperations described can be replaced or eliminated for other embodimentsof the method.

Embodiments for forming a semiconductor structure with an interconnectstructure are provided. The interconnect structure includes a number ofmetallization layers formed in a dielectric layer (such as inter-metaldielectric, IMD). One process for forming an interconnect structure isthe damascene process. FIGS. 1A-1L show cross-sectional representationsof various stages of forming a semiconductor device structure 100 withan interconnect structure, in accordance with some embodiments of thedisclosure. FIGS. 1A-1L show a trench-first process for forming a dualdamascene structure.

Referring to FIG. 1A, semiconductor device structure 100 includes asubstrate 102. Substrate 102 may be made of silicon or othersemiconductor materials. Alternatively or additionally, substrate 102may include other elementary semiconductor materials such as germanium.In some embodiments, substrate 102 is made of a compound semiconductorsuch as silicon carbide, gallium arsenic, indium arsenide, or indiumphosphide. In some embodiments, substrate 102 is made of an alloysemiconductor such as silicon germanium, silicon germanium carbide,gallium arsenic phosphide, or gallium indium phosphide. In someembodiments, substrate 102 includes an epitaxial layer. For example,substrate 102 has an epitaxial layer overlying a bulk semiconductor.

Some device elements (not shown) are formed in substrate 102. Deviceelements include transistors (e.g., metal oxide semiconductor fieldeffect transistors (MOSFET), complementary metal oxide semiconductor(CMOS) transistors, bipolar junction transistors (BJT), high-voltagetransistors, high-frequency transistors, p-channel and/or n channelfield effect transistors (PFETs/NFETs), etc.), diodes, and/or otherapplicable elements. Various processes are performed to form deviceelements, such as deposition, etching, implantation, photolithography,annealing, and/or other applicable processes. In some embodiments,device elements are formed in substrate 102 in a front-end-of-line(FEOL) process.

Substrate 102 may include various doped regions such as p-type wells orn-type wells). Doped regions may be doped with p-type dopants, such asboron or BF₂, and/or n-type dopants, such as phosphorus (P) or arsenic(As). The doped regions may be formed directly on substrate 102, in aP-well structure, in an N-well structure, or in a dual-well structure.

Substrate 102 may further include isolation features (not shown), suchas shallow trench isolation (STI) features or local oxidation of silicon(LOCOS) features. Isolation features may define and isolate variousdevice elements.

As shown in FIG. 1A, a first dielectric layer 106 (such as inter-metaldielectric, IMD) is formed on substrate 102, and a first conductivefeature 104 is embedded in first dielectric layer 106. First dielectriclayer 106 and first conductive feature 104 are formed in aback-end-of-line (BEOL) process.

First dielectric layer 106 may be a single layer or multiple layers.First dielectric layer 106 is made of s silicon oxide (SiOx), siliconnitride (SixNy), silicon oxynitride (SiON), or dielectric material(s)with low dielectric constant (low-k). In some embodiments, firstdielectric layer 106 is made of an extreme low-k (ELK) dielectricmaterial with a dielectric constant (k) less than about 2.5. In someembodiments, ELK dielectric materials include carbon doped siliconoxide, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes(BCB), polytetrafluoroethylene (PTFE) (Teflon), or silicon oxycarbidepolymers (SiOC). In some embodiments, ELK dielectric materials include aporous version of an existing dielectric material, such as hydrogensilsesquioxane (HSQ), porous methyl silsesquioxane (MSQ), porouspolyarylether (PAE), porous SiLK, or porous silicon oxide (SiO₂). Insome embodiments, dielectric layer 106 is deposited by a plasma enhancedchemical vapor deposition (PECVD) process or by a spin coating process.

In some embodiments, first conductive feature 104 is made of copper(Cu), copper alloy, aluminum (Al), aluminum alloy, tungsten (W),tungsten alloy, titanium (Ti), titanium alloy, tantalum (Ta) or tantalumalloy. In some embodiments, first conductive feature 104 is formed by aplating method.

A first etch stop layer 110 is formed on first dielectric layer 106.Etch stop layer 110 may be a single layer or multiple layers. First etchstop layer 110 is made of silicon oxide (SiOx), silicon carbide (SiC),silicon nitride (SixNy), silicon carbonitride (SiCN), silicon oxycarbide(SiOC), silicon oxycarbon nitride (SiOCN), or another applicablematerial. In some embodiments, first etch stop layer 110 has a bi-layerstructure which includes a silicon oxide (SiOx) layer formed on a SiClayer, and silicon oxide layer is formed from tetraethyl orthosilicate(TEOS). The SiC layer is used as a glue layer to improve adhesionbetween the underlying layer and silicon oxide layer.

A second dielectric layer 112 is formed on first etch stop layer 110.Second dielectric layer 112 may be a single layer or multiple layers.Second dielectric layer 112 is made of silicon oxide (SiOx), siliconnitride (SixNy), silicon oxynitride (SiON), or dielectric material(s)with low dielectric constant (low-k). In some embodiments, seconddielectric layer 112 is made of an extreme low-k (ELK) dielectricmaterial with a dielectric constant (k) less than about 2.5.

A second etch stop layer 114 and a hard mask layer 116 are sequentiallyformed on second dielectric layer 112. In some embodiments, second etchstop layer 114 is made of nitrogen-free material, such as siliconoxycarbide (SiOC). In some embodiments, hard mask layer 116 is made of ametal material, such as titanium nitride (TiN), tantalum nitride (TaN),or tungsten nitride (WN). Hard mask layer 116 made of metal material isconfigured to provide a high etching selectivity relative to seconddielectric layer 112 during the plasma process.

A tri-layer photoresist structure 120 is formed on hard mask layer 116.Tri-layer photoresist structure 120 includes a bottom layer 124, amiddle layer 126 and a top layer 128. In some embodiments, bottom layer124 is a bottom anti-reflective coating (BARC) layer which is used toreduce reflection during the photolithography process. In someembodiments, bottom layer 124 is made of nitrogen-free material, such assilicon oxynitride (SiON), silicon rich oxide, or silicon oxycarbide(SiOC). In some embodiments, middle layer 126 is made of silicon-basedmaterial, such as silicon nitride, silicon oxynitride or silicon oxide.

Top layer 128 may be a positive photoresist layer or a negativephotoresist layer. In some embodiments, top layer 128 is made of Poly(methyl methacrylate) (PMMA), Poly (methyl glutarimide) (PMGI), Phenolformaldehyde resin (DNQ/Novolac) or SU-8.

In some embodiments, bottom layer 124 has a thickness in a range fromabout 80 nm to about 120 nm. In some embodiments, middle layer 126 has athickness in a range from about 25 nm to about 45 nm. In someembodiments, top layer 128 has a thickness in a range from about 80 nmto about 120 nm.

Afterwards, top layer 128 is patterned to form a patterned top layer128. Patterned top layer 128 includes a first portion 128 a, a secondportion 128 b, a third portion 128 c.

FIG. 1B′ shows an enlarged view of the region A of FIG. 1B after toplayer 128 is patterned, in accordance with some embodiments of thedisclosure.

First portion 128 a is parallel to second portion 128 b, and secondportion 128 b is parallel to third portion 128 c. Second portion 128 bis connected to the third portion 128 c by fourth portion (not shown).Specifically, first portion 128 a, second portion 128 b and thirdportion 128 c are extended along the Y-axis, but fourth portion (notshown) is extended along the X-axis.

As manufacturing technologies for semiconductor devices have developed,the pattern sizes of semiconductor devices have decreased. However,pattern size is limited by the resolution limit of the lithographyprocess used. In some embodiments, during the lithography process, thespatial resolution in the X-direction is different from that in theY-direction. Therefore, a space between neighboring vertical patterns(or horizontal patterns) may be greater than a predetermined spacing dueto the resolution limit of the lithography process.

In addition, because of the resolution limit of the lithography process,some defects (“hot spots”, such as shrinkage or distortion) may beproduced at some positions which are close to a turning point or acorner of a photoresist layer when the photoresist layer is patterned.In some embodiments, as shown in FIG. 1B′, some defects are shown inregion A. Once some defects are produced in patterned top layer 128,underlying layers (such as middle layer 126 or bottom layer 124) mayalso have defects when the underlying layer is patterned by usingpatterned top layer 128 as a mask. As a result, patterned top layer 128and underlying layers may be distorted or even broken.

As shown in FIG. 1B, first portion 128 a has an ideal pattern and hassymmetrical sidewalls. Due to the resolution limit of the lithographyprocess, second portion 128 b has an undesirable pattern and has jaggedand/or asymmetrical sidewalls. First portion 128 a has a first width W₁,second portion 128 b has a second width W₂, and second width W₂ issmaller than first width W₁. Third portion 128 c also has an undesirablepattern which has jagged and/or asymmetrical sidewalls. An opening 135is formed between first portion 128 a and second portion 128 b and has athird width W₃.

“Line width roughness (LWR)” is a measure of the smoothness of thesidewalls of a linear feature when viewed from the top down. As shown inFIG. 1B′, an LWR of first portion 128 a is smaller than that of secondportion 128 b because second portion 128 b has asymmetrical sidewalls.

A “pitch” is defined as the distance from one feature to a neighboringfeature. As shown in FIG. 1B, first pitch P₁ is defined as the distancefrom first portion 128 a to second portion 128 b. In some embodiments,first pitch P₁ is in a range from about 35 nm to about 120 nm.

After top layer 128 is patterned, middle layer 126 is patterned by apatterning process as shown in FIG. 1C and FIG. 1D, in accordance withsome embodiments of the disclosure. The patterning process includes aphotolithography process and an etching process. The etching process isperformed by using a first plasma process 15. Photolithography processesinclude soft baking, mask aligning, exposure, post-exposure baking,developing the photoresist, rinsing and drying (e.g., hard baking).

The first plasma process 15 includes using a mixed gas includinghydrogen gas (H₂). In addition to hydrogen gas (H₂), the mixed gas mayfurther include fluorine-containing gas, inert gas, nitrogen gas (N₂) oranother applicable gas. In some embodiments, fluorine-containing gasincludes nitrogen trifluoride (NF₃), sulfur hexafluoride (SF₆),hexafluoroethane (C₂F₆), tetrafluoromethane (CF₄), trifluoromethane(CHF₃), difluoromethane (CH₂F₂), octofluoropropane (C₃F₈),octofluorocyclobutane (C₄F₈), or octofluoroisobutylene (C₄F₈), fluorine(F₂). In some other embodiments, the inert gas includes argon gas (Ar),or helium gas (He).

During first plasma process 15, hydrogen gas is supplied to top layer128 and middle layer 126. Hydrogen gas is used to adjust the pattern oftop layer 128 and middle layer 126. Therefore, the line width roughness(LWR) of patterned top layer 128 is improved by first plasma process 15with hydrogen gas. In some embodiments, if patterned top layer 128 isnot pre-treated by first plasma process 15 with hydrogen gas, the LWR isin a range from about 5 nm to about 9 nm. In some embodiments, afterperforming first plasma process 15, LWR of patterned top layer 128 is ina range from about 2 nm to about 4 nm.

Hydrogen gas has another function to use as a modified gas to form aprotection film 140 on sidewalls and top surfaces of patterned top layer128 and middle layer 126. In some embodiments, when fluorine-containinggas and hydrogen gas are used, a chemical reaction (I) occurs.Therefore, protection film 140 made of polymer containing CxHyFz isobtained.

C_(a)F_(b)+H₂→C_(x)H_(y)Fz  (I)

If no hydrogen gas is used in the first plasma process, thefluorine-containing gas may be the main etching gas to etch thesilicon-containing compound. Since middle layer 126 is made of asilicon-containing compound, middle layer 126 will be etched. However,the etching rate of middle layer 126 may be too high. Therefore, in someembodiments, the hydrogen gas in first plasma process 15 is used toadjust the etching rate. When the hydrogen gas is added in first plasmaprocess 15, the hydrogen gas will react with fluorine-containing gas(see chemical reaction (I)), and therefore the etching rate is decreasedcompared with the first plasma process without using the hydrogen gas.On the other hand, if the amount of the hydrogen gas used in firstplasma process 15 is too high, the hydrogen gas may also act like anetching gas to etch middle layer 126. Therefore, the amount of thehydrogen gas should be controlled to obtain the desired pattern.

The flow rate of the hydrogen gas is controlled according to thepredetermined etched width. When the flow rate of the hydrogen gas iscontrolled in different range, different reactions occur. There arethree reactions including reactions (a), (b) and (c) in a reactionchamber of the first plasma process 15. In the reaction (a), a fluorineetching reaction occurs which is represented by chemical reactions (II)and (III).

e−+CF₄→CF₃+F+e−  (II)

Si+4F→SiF₄  (III)

In the reaction (b), a polymer formation reaction occurs which isrepresented by chemical reactions (IV) and (V).

H+F→HF  (IV)

CF₄+H₂→CxHyFz  (V)

In the reaction (c), a fluorine formation reaction occurs which isrepresented by chemical reactions (VI) and (VII).

HF+e ⁻→H+F+e ⁻  (VI)

H+HF→H₂+F  (VII)

In some embodiments, the flow rate of the hydrogen gas is controlledwithin a range of about 0.1 standard cubic centimeters per minute (sccm)to about 300 sccm. The flow rate of the hydrogen gas is divided intothree phases including phase I (about 0.1 sccm to about 100 sccm), phaseII (about 101 sccm to about 200 sccm) and phase III (about 201 sccm toabout 300 sccm). FIG. 2 shows a plot of the second pitch P₂ versus theflow rate of hydrogen gas (H₂), in accordance with some embodiments ofthe disclosure. The second pitch P₂ is shown in FIG. 1D.

In some embodiments, in the phase I, the reaction (b) is dominate, andthe reactions (a) and (c) are subordinate. Therefore, the protectionlayer 140 is formed on the top surface and sidewall of the top layer128. The line width roughness (LWR) of patterned top layer 128 isimproved. In other words, the pattern of the top layer 128 made ofphotoresist layer is cured. It should be noted that if the flow rate ofthe hydrogen gas is smaller than 0.1 sccm, the protection layer 140 istoo thin to cure the pattern of the top layer 128. As shown FIG. 2, inthe phase I, the second pitch P₂ gradually decreases as the flow rate ofhydrogen gas increases.

In some embodiments, in the phase II, the reactions (b) and (c) aredominate and they are in balance, and the reaction (a) is subordinate.Therefore, the deposition reaction for forming the protection layer 140and etching reaction for etching the middle layer 126 occurconcurrently. It should be noted that compared with phase I, more amountof fluorine (F) is consumed by hydrogen (H) in phase II. Therefore, aratio of carbon to fluorine (C/F) in phase II is higher than that inphase I. As shown FIG. 2, in the phase II, the second pitch P₂ graduallyincreases as the flow rate of hydrogen gas increases. For example, inthe phase II, the critical dimension (second pitch P₂) has an idealrange.

In some embodiments, in the phase III, the reaction (c) is dominate, andthe reactions (a) and (b) are subordinate. Therefore, the etchingprocess for etching the middle layer 126 is dominate. It should be notedthat if the flow rate of the hydrogen gas is larger than 300 sccm, thetop layer 128 may undesirably be etched. As shown FIG. 2, in the phaseIII, the second pitch P₂ gradually increases as the flow rate ofhydrogen gas increases. The slope in phase III is greater than the slopein phase II.

In some embodiments, the volume ratio of hydrogen gas to mixed gas inplasma process 15 is in a range from about 3 vol. % to about 60 vol. %.If the flow rate or volume ratio of the hydrogen gas is too low,protection film 140 may be too thick. Therefore, a line width of middlelayer 126 that is wider than the predetermined value is obtained. If theflow rate or volume ratio of hydrogen gas is too high, too much ofmiddle layer 126 may be removed. Therefore, a line width of middle layer126 that is narrower than the predetermined value is obtained.

In some embodiments, first plasma process 15 is a dry etching processand is operated at a pressure in a range from about 5 mT to about 20 mT.In some embodiments, first plasma process 15 is operated by power in arange from about 400 W to about 1000 W. In some embodiments, firstplasma process 15 is operated by bias power in a range from about 50V toabout 500V. In some embodiments, first plasma process 15 is operated ata temperature in range from about 20° C. to about 80° C.

Since the hydrogen gas is controlled to remain within a range in firstplasma process 15, hydrogen gas also provides another advantage in thatthe etching selectivity of middle layer 126 is improved. In someembodiments, middle layer 126 has an etching selectivity relative to toplayer 128 in a range from about 1.2 to about 100.

In the description above, using the hydrogen gas in first plasma process15 has several advantages. First, the line width roughness (LWR) ofpatterned top layer 128 is improved. Second, a protection film 140 isformed on the sidewalls of top layer 128 and middle layer 126 to adjustthe shape of top layer 128 and middle layer 126. Third, a predeterminedpitch value is obtained by controlling the flow rate of hydrogen gas ina range during first plasma process 15. Fourth, the etching selectivityof middle layer 126 to top layer 128 is improved.

After first plasma process 15, a patterned middle layer 126 is obtainedas shown in FIG. 1D, in accordance with some embodiments of thedisclosure. It should be noted that, because the shape of top layer 128is adjusted by first plasma process 15 with hydrogen gas, patternedmiddle layer 126 has a symmetrical pattern. Patterned middle layer 126has a first portion 126 a, a second portion 126 b and a third portion126 c. Second portion 126 b is connected to third portion 126 c bysecond portion 126 b.

FIG. 1D′ shows an enlarged view of the region B of FIG. 1D after middlelayer 126 is patterned, in accordance with some embodiments of thedisclosure.

As shown in FIG. 1D′, patterned middle layer 126 includes first portion126 a, second portion 126 b and third portion 126 c. Second portion 126b and third portion 126 c both have symmetrical patterns. No obviousdefects (hot spots) are formed on the sidewalls of second portion 126 band third portion 126 c of middle layer 126. First portion 126 a isparallel to second portion 126 b and is extended along the Y-axisdirection. Third portion 126 c is parallel to second portion 126 b andis extended along the Y-axis direction. Fourth portion (not shown) isperpendicular to third portion 126 c and is extended along the X-axisdirection. Second portion 126 b is connected to third portion 126 c afourth portion (not shown). In some embodiments, a second pitch P₂between first portion 126 a and second portion 126 b is in a range fromabout 35 nm to about 120 nm.

After middle layer 126 is patterned, bottom layer 124 is patterned byusing patterned middle layer 126 as a mask, as shown in FIG. 1E, inaccordance with some embodiments of the disclosure. In some embodiments,a portion of bottom layer 124 is removed by an etching process 17.

After bottom layer 126 is patterned, hard mask layer 116 is patterned byusing patterned top layer 128, patterned middle layer 126 and patternedbottom layer 124 as a mask as shown in FIG. 1F, in accordance with someembodiments of the disclosure. As a result, a patterned hard mask layer116 is obtained. Patterned hard mask layer 116 includes a first portion116 a with a fourth width W₄, and a second portion 116 b with a fifthwidth W₅. Fourth width W₄ is substantially the same as first width W₁(shown in FIG. 1B), and fifth width W₅ is substantially the same assecond width W₂ (shown in FIG. 1B).

Afterwards, first photoresist structure 120 including top layer 128,middle layer 126 and bottom layer 124 is removed by a number of etchingprocesses, such as wet etching processes or dry etching processes.

After first photoresist structure 120 is removed, a second photoresiststructure 220 is formed on patterned hard mask layer 116 as shown inFIG. 1G, in accordance with some embodiments of the disclosure. Secondphotoresist structure 220 includes a bottom layer 224, a middle layer226 and a top layer 228. Top layer 128 is patterned first to form apatterned top layer 228. Patterned top layer 228 has a first opening 240with a sixth width W₆ which is smaller than third width W₃ (as shown inFIG. 1B).

After top layer 228 is patterned, middle layer 226 is patterned by apatterning process including a second plasma process 25 as shown in FIG.1H, in accordance with some embodiments of the disclosure. Similar tofirst plasma process 15, second plasma process 25 is performed by usinga mixed gas including hydrogen gas. In addition to hydrogen gas, themixed gas also includes fluorine-containing gas, inert gas, nitrogen gas(N₂) or combinations thereof.

As mentioned above, using hydrogen gas in second plasma process 25 hasseveral advantages. First, the line width roughness (LWR) of patternedtop layer 228 is improved. Second, a protection film (not shown) isformed on the sidewalls of top layer 228 and middle layer 226 to adjustthe shape of top layer 228 and middle layer 226. Third, a predeterminedpitch value is obtained by controlling the flow rate of hydrogen gasduring second plasma process 25. Fourth, the etching selectivity ofmiddle layer 226 to top layer 228 is improved.

After middle layer 226 is patterned, bottom layer 224, second etch stoplayer 114 and second dielectric layer 112 are sequentially removed asshown in FIG. 1I, in accordance with some embodiments of the disclosure.A fist via hole 251 a and a second via hole 251 b are formed in seconddielectric layer 112.

After second dielectric layer 112 is patterned, second photoresiststructure 220 is removed as shown in FIG. 1J, in accordance with someembodiments of the disclosure.

Afterwards, a portion of second etch stop layer 114, a portion of seconddielectric layer 112 and a portion of first etch stop layer 110 areremoved by using hard mask layer 116 as a mask as shown in FIG. 1K, inaccordance with some embodiments of the disclosure. As a result, firstconductive feature 104 is exposed.

As shown in FIG. 1K, first via hole 251 a and a first trench hole 255 acollectively constitute a first trench-via structure 280 a for use as adual damascene cavity. Second via hole 251 b and a second trench hole255 b collectively constitute a second trench-via structure 280 b foruse as a dual damascene cavity.

Afterwards, second etch stop layer 114 and hard mask layer 116 areremoved. In some embodiments, second etch stop layer 114 and hard masklayer 116 are removed by a chemical mechanical polishing (CMP) process.

Afterwards, a diffusion barrier layer 140 is formed in first trench-viastructure 280 a and second trench-via structure 280 b, and a secondconductive feature 142 is formed on diffusion barrier layer 140 as shownin FIG. 1L, in accordance with some embodiments of the disclosure. Inother words, second conductive feature 142 is formed in seconddielectric layer 112, and it is surrounded by diffusion barrier layer140. First conductive structure 145 a is formed by filling diffusionbarrier layer 140 and second conductive feature 142 in first trench-viastructure 280 a, and second conductive structure 145 b is formed byfilling diffusion barrier layer 140 and second conductive feature 142 insecond trench-via structure 280 b. Second conductive feature 142 iselectrically connected to first conductive feature 104. First conductivefeature 104 embedded in first dielectric layer 106 and second conductivefeature 142 embedded in second dielectric layer 112 form an interconnectstructure 230.

In some embodiments, diffusion barrier layer 140 may be made of titanium(Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), oraluminum nitride (AlN). In some embodiments, second conductive feature142 is made of copper, and diffusion barrier layer 202 includes TaN/Tabi-layer.

FIG. 1L′ shows a perspective view of semiconductor device structure 100,in accordance with some embodiments of the disclosure. FIG. 1L shows across-sectional representation along line III-III′ of FIG. 1L′.

As shown in FIG. 1L′, a third conductive structure 145 c is formed insecond dielectric layer 112. First conductive structure 145 a isparallel to second conductive structure 145 b, and first conductivestructure 145 a is parallel to third conductive structure 145 c. Secondconductive structure 145 b and third conductive structure 145 c areformed along the Y-direction. Second conductive structure 145 b has afirst end 147, third conductive structure 145 c has a second end 149,and first end 147 and second end 149 are on opposite sides of seconddielectric layer 112. An end-to-end space S₁ is defined as the distancebetween first end 147 and second end 149. A third pitch P₃ is defined asthe distance from first conductive structure 145 a to second conductivestructure 145 b. In some embodiments, third pitch P₃ is in a range fromabout 70 nm to about 90 nm.

The pattern of second dielectric layer 112 is indirectly obtained byusing patterned hard mask layer 116 as a mask, and patterned hard mask116 is indirectly obtained by using top layer 128 as a mask. If nohydrogen gas is used in first plasma process 15, the pattern of seconddielectric layer 112 between first conductive structure 145 a and secondconductive structure 145 b may be damaged or even broken due to somedefects in region A of top layer 128 (as shown in FIG. 1B). If thedefects in top layer 128 are not repaired, some defects or brokenregions may form in second dielectric layer 112 by. Therefore, anundesirable bridge problem may occur because first conductive structure145 a and second conductive structure 145 b may connect to each otherthrough broken second dielectric layer 112.

It should be noted that the pattern of top layer 128 is repaired byusing a plasma process with hydrogen gas, and therefore middle layer 126is patterned to have a predetermined pattern. In addition, the flow rateof hydrogen gas is controlled in a range to obtain predetermined pitchP₃ and end-to-end spacing S₃. In addition, LWR and etching selectivityof middle layer 126 are improved by using plasma process with hydrogengas.

Afterwards, the processing steps of FIGS. 1A-1L may be repeated toconstruct a multi-level dual damascene metal interconnect structure (notshown). In some other embodiments, the plasma process with hydrogen gasof the disclosure is applied to form a single damascene structure.

Embodiments for forming a semiconductor device structure and method forformation of the same are provided. An interconnect structure is formedby a number of patterning processes. The patterning process includesusing a tri-layer photoresist structure including a top layer, a middlelayer, and a bottom layer. The top layer is patterned first to form apatterned top layer. The middle layer is patterned by a plasma processwith hydrogen gas. The defects in the patterned top layer are adjustedby the plasma process, and a protection layer is formed on the sidewallsof the top layer and middle layer to compensate for the shape of the toplayer. A line width roughness (LWR) of the top layer is improved by theplasma process. The etching selectivity of the middle layer to the toplayer is improved by the plasma process. In addition, the flow rate ofhydrogen gas is kept within a range to obtain a predetermined pitch andend-to-end spacing. Therefore, the interconnect structure with a smallerpitch and end-to-end spacing is obtained.

In some embodiments, a method for forming a semiconductor devicestructure is provided. The method includes providing a substrate andforming a bottom layer, a middle layer, and a top layer on thesubstrate. The method also includes patterning the top layer to form apatterned top layer and patterning the middle layer by a patterningprocess including a plasma process to form a patterned middle layer. Theplasma process is performed by using a mixed gas including hydrogen gas(H₂). The method further includes controlling a flow rate of thehydrogen gas (H₂) to improve an etching selectivity of the middle layerto the top layer, wherein the patterned middle layer includes a firstportion and a second portion parallel to the first portion, and a pitchis between the first portion and the second portion.

In some embodiments, a method for forming a semiconductor devicestructure is provided. The method includes providing a substrate andforming a dielectric layer on the substrate. The method also includesforming a hard mask layer on the dielectric layer and forming a bottomlayer, a middle layer, and a top layer on the hard mask layer. Themethod also includes patterning the top layer to form a patterned toplayer and patterning the middle layer by a patterning process includinga plasma process to form a patterned middle layer. The plasma process isperformed by using a mixed gas including hydrogen gas (H₂). The methodincludes patterning the bottom layer to form a patterned bottom layerand patterning the hard mask layer by using the patterned top layer, thepatterned middle layer, and patterned bottom layer as a mask to form apatterned hard mask layer.

In some embodiments, a method for forming a semiconductor devicestructure is provided. The method includes providing a substrate andforming a dielectric layer on the substrate. The method also includesforming a hard mask layer on the dielectric layer and forming a bottomlayer, a middle layer, and a top layer on the hard mask layer, and themiddle layer is made of a silicon-containing compound. The methodincludes patterning the top layer to form a patterned top layer andperforming a plasma process on the top layer to improve the line widthroughness (LWR) of the top layer. The plasma process includes using amixed gas including hydrogen gas (H₂). The method includes continuouslyperforming the plasma process to the middle layer to form a protectionfilm on the sidewalls of the top layer and the sidewalls of the middlelayer, and continuously performing the plasma process on the middlelayer to remove a portion of the middle layer to form a patterned middlelayer. The method includes patterning the bottom layer to form apatterned bottom layer and patterning the hard mask layer by using thepatterned top layer, the patterned middle layer, and the patternedbottom layer as a mask to form a patterned hard mask layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a semiconductor devicestructure, comprising: receiving a substrate; forming a bottom layer, amiddle layer, and a top layer on the substrate; patterning the top layerto form a patterned top layer; patterning the middle layer by apatterning process comprising a plasma process to form a patternedmiddle layer, wherein the plasma process is performed by using a mixedgas comprising hydrogen gas (H₂); and controlling a flow rate of thehydrogen gas (H₂) to improve an etching selectivity of the middle layerto the top layer, wherein the patterned middle layer comprises a firstportion and a second portion parallel to the first portion, and a pitchis between the first portion and the second portion.
 2. The method forforming the semiconductor device structure as claimed in claim 1, themiddle layer has an etching selectivity relative to the top layer in arange from about 1.2 to about
 100. 3. The method for forming thesemiconductor device structure as claimed in claim 1, wherein the flowrate of the hydrogen gas (H₂) is in a range from 0.1 sccm to about 300sccm.
 4. The method for forming the semiconductor device structure asclaimed in claim 1, wherein the mixed gas further comprisesfluorine-containing gas, inert gas or combinations thereof.
 5. Themethod for forming the semiconductor device structure as claimed inclaim 1, wherein patterning the middle layer further comprises forming aprotection layer on the sidewalls of the middle layer
 6. A method forforming a semiconductor device structure, comprising: receiving asubstrate; forming a dielectric layer on the substrate; forming a hardmask layer on the dielectric layer; forming a bottom layer, a middlelayer, and a top layer on the hard mask layer; patterning the top layerto form a patterned top layer; patterning the middle layer by apatterning process comprising a plasma process to form a patternedmiddle layer, wherein the plasma process is performed by using a mixedgas comprising hydrogen gas (H₂); patterning the bottom layer to form apatterned bottom layer; and patterning the hard mask layer by using thepatterned top layer, the patterned middle layer, and patterned bottomlayer as a mask to form a patterned hard mask layer.
 7. The method forforming the semiconductor device structure as claimed in claim 6,wherein the middle layer has an etching selectivity relative to the toplayer in a range from about 1.2 to about
 100. 8. The method for formingthe semiconductor device structure as claimed in claim 6, wherein avolume ratio of hydrogen gas (H₂) to the mixed gas is in a range fromabout 3 vol % to about 60 vol %.
 9. The method for forming thesemiconductor device structure as claimed in claim 6, wherein the plasmaprocess is used to improve a line width roughness (LWR) of the middlelayer.
 10. The method for forming the semiconductor device structure asclaimed in claim 6, wherein patterning the middle layer furthercomprises forming a protection layer on the sidewalls of the middlelayer.
 11. The method for forming the semiconductor device structure asclaimed in claim 6, further comprising: removing the patterned toplayer, the patterned middle layer, and the patterned bottom layer;forming a second bottom layer, a second middle layer, and a second toplayer on the patterned hard mask layer; patterning the second top layerto form a patterned second top layer; patterning the second middle layerby a second plasma process to form a patterned second middle layer,wherein the second middle layer is made of a silicon-containingcompound, and the second plasma process comprises using a mixed gascomprising hydrogen gas (H₂).
 12. The method for forming thesemiconductor device structure as claimed in claim 6, wherein a flowrate of hydrogen gas (H₂) in the plasma process is in a range from 0.1sccm to about 300 sccm.
 13. The method for forming the semiconductordevice structure as claimed in claim 6, the mixed gas further comprisingfluorine-containing gas, inert gas or combinations thereof.
 14. Themethod for forming the semiconductor device structure as claimed inclaim 13, wherein the fluorine-containing compound comprises nitrogentrifluoride (NF₃), sulfur hexafluoride (SF₆), hexafluoroethane (C₂F₆),tetrafluoromethane (CF₄), trifluoromethane (CHF₃), difluoromethane(CH₂F₂), octofluoropropane (C₃F₈), octofluorocyclobutane (C₄F₈),octofluoroisobutylene (C₄F₈) or fluorine (F₂).
 15. A method for forminga semiconductor device structure, comprising: receiving a substrate;forming a dielectric layer on the substrate; forming a hard mask layeron the dielectric layer; forming a bottom layer, a middle layer, and atop layer on the hard mask layer, wherein the middle layer is made of asilicon-containing compound; patterning the top layer to form apatterned top layer; performing a plasma process to the top layer toimprove a line width roughness (LWR) of the top layer, wherein theplasma process comprises using a mixed gas comprising hydrogen gas (H₂);continuously performing the plasma process on the middle layer to form aprotection film on the sidewalls of the top layer and the sidewalls ofthe middle layer; continuously performing the plasma process on themiddle layer to remove a portion of the middle layer to form a patternedmiddle layer; patterning the bottom layer to form a patterned bottomlayer; patterning the hard mask layer by using the patterned top layer,the patterned middle layer, and the patterned bottom layer as a mask toform a patterned hard mask layer.
 16. The method for forming thesemiconductor device structure as claimed in claim 15, wherein themiddle layer has an etching selectivity relative to the top layer in arange from about 1.2 to about
 100. 17. The method for forming thesemiconductor device structure as claimed in claim 15, wherein a flowrate of hydrogen gas (H₂) in the plasma process is in a range from 0.1sccm to about 300 sccm.
 18. The method for forming the semiconductordevice structure as claimed in claim 15, wherein a volume ratio ofhydrogen gas (H₂) to the mixed gas is in a range from about 3 vol % toabout 60 vol %.
 19. The method for forming the semiconductor devicestructure as claimed in claim 15, wherein the mixed gas furthercomprises fluorine-containing gas, inert gas, or combinations thereof.20. The method for forming the semiconductor device structure as claimedin claim 15, wherein the first plasma process is performed at a pressurein a range from about 5 mT to about 20 mT.